Product Description
MZVKW512HMJP-000H1 | SAMSUNG | 512GB M.2 2280- PCI-E 3.0 X4 (NVMe) Solid State DriveProduct Details
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Custom Field
Form Factor M.2 2280
Capacity 512 GB
Flash Memory Technology Multi-level Cell (MLC)
Random Read IOPS 330000
Random Write IOPS 300000
MTBF 1500000 Hour(s)
Drive Interface Type PCI Express 3.0 x4
Features TRIM SupportS.M.A.R.T SupportLow Power StandbyNVM Express (NVMe)